Positive Effect of Parasitic Monoclinic Phase of Hf _0.5 Zr _0.5 O ₂ on Ferroelectric Endurance

Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue epitaxial Hf0.5Zr0.5O2 (HZO) instead polycrystalline samples. Using different substrates, the relative amount orthorhombic (ferroelectric) and monoclinic (paraelectric) phases is controlled. Epitaxial HZO films almost free parasitic phase suffer severe fatigue. In contrast, mitigated with a greater paraelectric phase. suggests that can intrinsically pronounced HZO. It argued enhancement endurance showing coexisting results from suppression pinned domain propagation at ferroelectric–paraelectric grain boundaries, contrast rapid increase size domains single regions.